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Progress and Prospect of Semiconductor Silicon Wafers in China

Zhang Guohu, Xiao Qinghua, Ma Fei

Strategic Study of CAE 2023, Volume 25, Issue 1,   Pages 68-78 doi: 10.15302/J-SSCAE-2023.01.002

Abstract: China's semiconductor silicon wafers are highly dependent on foreign trade.level of China’s semiconductor industry.status of the global semiconductor silicon wafer technologies and industry, and prospects the developmentThe study specifically focuses on the development status of China's semiconductor silicon wafer industryhigher-quality development of China’s semiconductor silicon wafer industry.

Keywords： semiconductor silicon wafer     8 inches     12 inches     industry synergy     advanced processing    

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Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 1-3 doi: 10.1007/s11708-016-0436-4

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Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

Frontiers of Mechanical Engineering 2021, Volume 16, Issue 3,   Pages 559-569 doi: 10.1007/s11465-020-0624-0

Abstract: Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of siliconGrinding experiments using coarse and fine resin-bond diamond grinding wheels were performed on siliconHowever, the PV value, surface roughness, and subsurface damage of silicon wafers with taping deterioratedThe PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheelThe surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh

Keywords： taping     silicon wafer     backgrinding     subsurface damage     surface roughness    

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Thoughts on the Construction of an Electronic Grade Polycrystalline Silicon Plant with Annual Production

Liang Junwu

Strategic Study of CAE 2000, Volume 2, Issue 6,   Pages 33-35

Abstract:

This paper briefly reviews the electronic grade polysilicon production capacity and market demand in the world as well as in China, It is estimated that in the year of 2000 and 2010 the polysilicon demand in China will be 736 t/a and 1 304 t/a, respectively.

In the recent years, the gross polysilicon production in China is only 80 t/a, so the construction of an electronic grade polysilicon plant in China with a 1 000 t/a production capacity should be resonable. However, referring the newest statistical data since 1997, the world polysilicon production capacity has being exceeded the market demand and the trend will continue in the near future. In order to occupy the domestic polysilicon market the future polysilicon plant will face challenge. The quality of the product and the manufacturing cost are the most important criteria to be considered. Ensuring the polysilicon product purity, the manufacturing cost should be near 20 dollars per kilogram for competition in domestic market.

Keywords： polycrystalline silicon     semiconductor     production    

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High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar

Fanying MENG,Jinning LIU,Leilei SHEN,Jianhua SHI,Anjun HAN,Liping ZHANG,Yucheng LIU,Jian YU,Junkai ZHANG,Rui ZHOU,Zhengxin LIU

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 78-84 doi: 10.1007/s11708-016-0435-5

Abstract: sunlight into electrical power, the pyramid size, pyramid density and roughness of surface of the Cz-Si waferthe simulation revealed that the highest efficiency of the SHJ solar cell could be achieved by the waferFortunately, over 23% of the conversion efficiency of the SHJ solar cell with a wafer thickness of 100Evidently, the large availability of both n-type ingot and thinner wafer strongly supported the lower

Keywords： n-type Cz-Si     thinner wafer     surface texture     high efficiency     SHJ solar cell    

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Recent advances of hydrogen production through particulate semiconductor photocatalytic overall water

Frontiers in Energy 2022, Volume 16, Issue 1,   Pages 49-63 doi: 10.1007/s11708-022-0817-9

Abstract: Solar energy-driven photocatalytic water splitting has been investigated for decades to produce clean and renewable green hydrogen. In this paper, the cutting-edge research within the overall water splitting system is summarized from the one-step photocatalytic overall water splitting (POWS) system to the two-step system and the cocatalysts research in this field. In addition, the photocatalytic reaction engineering study is also reviewed which is crucial for future scale-up. This mini-review provides a picture of survey of recent progress of relevant overall water splitting system, with particular attention paid to material system and mechanistic breakthroughs, and highlights the challenge and opportunity of the current system.

Keywords： photocatalysis     overall water splitting     hydrogen    

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Patterned wafer bonding using ultraviolet adhesive

Rui ZHUO, Guanglan LIAO, Wenliang LIU, Lei NIE, Tielin SHI

Frontiers of Mechanical Engineering 2011, Volume 6, Issue 2,   Pages 214-218 doi: 10.1007/s11465-011-0130-5

Abstract:

The process of patterned wafer bonding using ultraviolet (UV) adhesive as the intermediate layer wasExperimental results indicate that patterned wafer bonding using UV adhesive is achieved under room temperaturePatterned wafer bonding using UV adhesive will have great potential in the fabrication of microfluidic

Keywords： ultraviolet (UV) adhesive     intermediate layer     patterned wafer bonding    

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Heterogeneous III-V silicon photonic integration: components and characterization Special Feature on Optoelectronic Devices and Inte

Shang-jian ZHANG, Yong LIU, Rong-guo LU, Bao SUN, Lian-shan YAN

Frontiers of Information Technology & Electronic Engineering 2019, Volume 20, Issue 4,   Pages 472-480 doi: 10.1631/FITEE.1800482

Abstract:

Heterogeneous III-V silicon (Si) photonic integration is considered one of the key methods for realizingWe also describe the progress in the on-wafer characterization of photonic integration circuits, especially

Keywords： Heterogeneous photonic integration     Optical interconnection     On-wafer characterization    

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Advantageous mechanochemical synthesis of copper(I) selenide semiconductor, characterization, and properties

Frontiers of Chemical Science and Engineering 2022, Volume 16, Issue 3,   Pages 433-442 doi: 10.1007/s11705-021-2066-6

Abstract: Copper(I) selenide-nanocrystalline semiconductor was synthesized via one-step mechanochemical synthesis

Keywords： Cu2Se     berzelianite     nanocrystalline semiconductor     mechanochemical synthesis     planetary ball    

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Liquid metal printing opening the way for energy conservation in semiconductor manufacturing industry

Frontiers in Energy 2022, Volume 16, Issue 4,   Pages 542-547 doi: 10.1007/s11708-022-0834-8

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Strategic Study on the Development of Advanced Semiconductor Materials and Auxiliary Materials in China

Writing Group of Advanced Semiconductor Materials and Auxiliary Materials

Strategic Study of CAE 2020, Volume 22, Issue 5,   Pages 10-19 doi: 10.15302/J-SSCAE-2020.05.002

Abstract:

The rapid development of the third-generation semiconductor materialsSiC and GaN offers China a strategic opportunity to realize the independent control over its advanced semiconductorIn this paper, we analyze the development status of semiconductor materials and auxiliary materials inTo promote the development of advanced semiconductor materials and auxiliary materials in China, we suggestTo promote the innovative development of the semiconductor industry,China should adhere to government

Keywords： advanced semiconductor materials     auxiliary materials     third-generation semiconductor     2035    

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Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Frontiers of Environmental Science & Engineering 2015, Volume 9, Issue 5,   Pages 905-911 doi: 10.1007/s11783-015-0786-x

Abstract: The current study investigated the effects of nano-silicon (Si) and common Si on lead (Pb) toxicity,

Keywords： silicon (Si)     lead (Pb)     rice (Oryza sativa L.)     toxicity     accumulation    

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Novel slack-based robust scheduling rule for a semiconductor manufacturing system with uncertain processing

Juan LIU, Fei QIAO, Yumin MA, Weichang KONG

Frontiers of Engineering Management 2018, Volume 5, Issue 4,   Pages 507-514 doi: 10.15302/J-FEM-2018045

Abstract:

The NP-hard scheduling problems of semiconductor manufacturing systems (SMSs) are further complicated

Keywords： semiconductor manufacturing system     uncertain processing time     dynamic scheduling     slack-based robust scheduling    

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Developments in semiconductor thermoelectric materials

Laifeng LI, Zhen CHEN, Min ZHOU, Rongjin HUANG

Frontiers in Energy 2011, Volume 5, Issue 2,   Pages 125-136 doi: 10.1007/s11708-011-0150-1

Abstract: The objectives of this paper are to introduce the recent developments in semiconductor thermoelectric

Keywords： thermoelectric materials     thermoelectric figure of merit     applications    

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Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Frontiers in Energy 2011, Volume 5, Issue 3,   Pages 305-312 doi: 10.1007/s11708-011-0155-9

Abstract: A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

Keywords： computer modeling     silicon     crystal growth     solar cells    

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Title Author Date Type Operation

Progress and Prospect of Semiconductor Silicon Wafers in China

Zhang Guohu, Xiao Qinghua, Ma Fei

Journal Article

Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

Journal Article

Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

Journal Article

Thoughts on the Construction of an Electronic Grade Polycrystalline Silicon Plant with Annual Production

Liang Junwu

Journal Article

High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar

Fanying MENG,Jinning LIU,Leilei SHEN,Jianhua SHI,Anjun HAN,Liping ZHANG,Yucheng LIU,Jian YU,Junkai ZHANG,Rui ZHOU,Zhengxin LIU

Journal Article

Recent advances of hydrogen production through particulate semiconductor photocatalytic overall water

Journal Article

Patterned wafer bonding using ultraviolet adhesive

Rui ZHUO, Guanglan LIAO, Wenliang LIU, Lei NIE, Tielin SHI

Journal Article

Heterogeneous III-V silicon photonic integration: components and characterization

Shang-jian ZHANG, Yong LIU, Rong-guo LU, Bao SUN, Lian-shan YAN

Journal Article

Advantageous mechanochemical synthesis of copper(I) selenide semiconductor, characterization, and properties

Journal Article

Liquid metal printing opening the way for energy conservation in semiconductor manufacturing industry

Journal Article

Strategic Study on the Development of Advanced Semiconductor Materials and Auxiliary Materials in China

Writing Group of Advanced Semiconductor Materials and Auxiliary Materials

Journal Article

Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Journal Article

Novel slack-based robust scheduling rule for a semiconductor manufacturing system with uncertain processing

Juan LIU, Fei QIAO, Yumin MA, Weichang KONG

Journal Article

Developments in semiconductor thermoelectric materials

Laifeng LI, Zhen CHEN, Min ZHOU, Rongjin HUANG

Journal Article

Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Journal Article